COURSE UNIT TITLE

: PHYSICAL ELECTRONICS

DEGREE PROGRAMMES

Description of Individual Course Units

Course Unit Code Course Unit Title Type Of Course D U L ECTS
EED 2009 PHYSICAL ELECTRONICS COMPULSORY 3 0 0 4

Offered By

Electrical and Electronics Engineering

Level of Course Unit

First Cycle Programmes (Bachelor's Degree)

Course Coordinator

ASSOCIATE PROFESSOR ÖZGE ŞAHIN

Offered to

Electrical and Electronics Engineering

Course Objective

1: To learn about semiconductor material physical properties, charge carriers in semiconductors, doped semiconductors, equilibrium Fermi levels,
2: To learn about small-signal model of diodes and small signal analysis concept,
3: To learn about FET transistor structures, BJT transistor structures, I-V characteristics (FET and BJT),
4: To learn about Semiconductor manufacturing technology,
5: To understand CMOS devices operating principle, working mechanism of p-n-p-n switching devices.

Learning Outcomes of the Course Unit

1   Students will be able to understand current conduction mechanism in undoped or doped semiconductor material,
2   Students will be able to understand semiconductor device operating mechanisms,
3   Students will be able to analyze diode circuits at small signal and large signal modes,
4   Students will be able to analyze circuits using FET, BJT or p-n-p-n devices,
5   Students are expected to gain knowledge on Semiconductor manufacturing technology.

Mode of Delivery

Face -to- Face

Prerequisites and Co-requisites

None

Recomended Optional Programme Components

None

Course Contents

Week Subject Description
1 Simple electric current conduction, bonding force and energy bands in solids, semiconductor material physical properties, atomic bonding, charge carriers in semiconductors (electron and holes),
2 Equilibrium distribution of electron and holes, excess carrier lifetime, the distribution function and Fermi energy, introduction to doped semiconductors, energy bands, equilibrium Fermi levels, carrier concentrations,
3 p-n Junctions, space charge at a junction, drift carriers, depletion width, carrier injection, forward biasing, reverse biasing, diode equation,
4 Diode rectifier applications, breakdown and zener diodes, zener diode reference voltage applications, introduction to small-signal model of diodes and small signal analysis concept,
5 Introduction to diffusion and diffusion process, Bipoloar Transistor (BJT)stucture, equations, I-V characteristics, common emitter, circuit,
6 FET transistor structures, I-V characteristics,
7 Midterm Exam I
8 Basic MOS (Metal Oxide semiconductor) structures and treshold voltage,
9 MOS transistor and MOS Regimes, MOS transistor I-V characteristics,
10 CMOS devices, output voltage to input voltage characteristics, applications, electrostatic discharge and latch up mechanism,
11 Origin of the electro-optic devices, light emitting diodes, solar cells and I-V characteristics.
12 Semiconductor manufacturing technology,
13 Midterm Exam II
14 p-n-p-n switching devices, thyristor switching parameters, thyristor applications.

Recomended or Required Reading


- Fundamentals of Microelectronics, Razavi, Wiley, 2007.
- Electronic Principles, Malvino, 1999.
- Solid State Electronic Devices, B. Streetman, S.K. Banerjee, 6th ed., PHI Learning, 2009
- Introduction to Physical Electronics, Wilson, Rice University, WEB: http://cnx.org/content/col10114/1.4

Planned Learning Activities and Teaching Methods

Lecture, Homework

Assessment Methods

SORTING NUMBER SHORT CODE LONG CODE FORMULA
1 MTE 1 MIDTERM EXAM 1
2 MTE 2 MIDTERM EXAM 2
3 QUZ QUIZ
4 FIN FINAL EXAM
5 FCG FINAL COURSE GRADE MTE 1 * 0.20 + MTE 2 * 0.20 + QUZ * 0.10 + FIN * 0.50
6 RST RESIT
7 FCG FINAL COURSE GRADE MTE 1 * 0.20 + MTE 2 * 0.20 + QUZ * 0.10 + RST * 0.50

Further Notes About Assessment Methods

None

Assessment Criteria

Homework, Exam

Language of Instruction

English

Course Policies and Rules

To be announced.

Contact Details for the Lecturer(s)

haldun.karaca@deu.edu.tr ozge.sahin@deu.edu.tr

Office Hours

To be announced.

Work Placement(s)

None

Workload Calculation

Activities Number Time (hours) Total Work Load (hours)
Lectures 12 3 36
Preparations before/after weekly lectures 12 1 12
Preparation for quiz etc. 1 2 2
Preparation for midterm exam 2 10 20
Preparation for final exam 1 18 18
Midterm 2 1,5 3
Final 1 2 2
TOTAL WORKLOAD (hours) 93

Contribution of Learning Outcomes to Programme Outcomes

PO/LOPO.1PO.2PO.3PO.4PO.5PO.6PO.7PO.8PO.9PO.10PO.11PO.12PO.13
LO.1555155532
LO.2555155532
LO.3555155533
LO.4555155533
LO.5554555533

CONTACT INFORMATION
Dokuz Eylül Üniversitesi Cumhuriyet Bulvarı No: 144 35210 Alsancak / İZMİR
Phone: +90(232) 412 12 12 - Fax: +90 (232) 464 81 35

Copyright 2012 DEÜ. BİD

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